Protected chip-scale package (CSP) pad structure

ABSTRACT

A method for forming an integrated circuit (IC) package is provided. In some embodiments, a semiconductor workpiece comprising a scribe line, a first IC die, a second IC die, and a passivation layer is formed. The scribe line separates the first and second IC dies, and the passivation layer covers the first and second IC dies. The first IC die comprises a circuit and a pad structure electrically coupled to the circuit. The pad structure comprises a first pad, a second pad, and a bridge. The bridge is within the scribe line and connects the first pad to the second pad. The passivation layer is patterned to expose the first pad, but not the second pad, and testing is performed on the circuit through the first pad. The semiconductor workpiece is cut along the scribe line to individualize the first and second IC dies, and to remove the bridge.

REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No.62/527,164, filed on Jun. 30, 2017, the contents of which areincorporated herein by reference in their entirety.

BACKGROUND

During the bulk manufacture of an integrated circuit (IC), a pluralityof IC dies are formed on a semiconductor substrate. The IC dies are thenseparated and packaged. One process for packaging an IC die is achip-scale packaging (CSP) process. A CSP process may be, for example, apackaging process that packages a single IC die in a direct surfacemountable package that is between about 1.0-1.2 times a die area of theIC die.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1C through FIGS. 4A-4C illustrate a series of views of someembodiments of a method for forming an integrated circuit (IC) packageusing a protected chip-scale packaging (CSP) pad structure.

FIG. 5 illustrates a flowchart of some embodiments of the method ofFIGS. 1A-1C through FIGS. 4A-4C.

FIGS. 6-9, 10A, 10B, 11, 12A, 12B, 13-19, 20A, 20B, and 21-26 illustratea series of views of some more detailed embodiments of the method ofFIGS. 1A-1C through 4A-4C.

FIG. 27 illustrates a flowchart of some embodiments of the method ofFIGS. 6-9, 10A, 10B, 11, 12A, 12B, 13-19, 20A, 20B, and 21-26.

FIGS. 28A-28C illustrate views of some embodiments of the IC packageformed according to the method of FIG. 27.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Many electronic devices comprise complementary metal-oxide-semiconductor(CMOS) image sensors (CISs). According to a method for forming CISpackages, a plurality of integrated circuit (IC) dies is formed on asemiconductor substrate. Each IC die comprises an image sensing circuitand a plurality of pads. The pads extend laterally along a periphery ofthe IC die and are covered by a passivation layer. Further, the pads areelectrically coupled to the image sensing circuit. After the IC dies areformed, openings are formed in the passivation layer to expose the pads,and a first round of circuit probe (CP) testing is performed on theimage sensing circuits using the pads. Assuming the first round of CPtesting is positive, an array of color filters and an array ofmicro-lens are formed stacked on each of the IC dies. Further, a secondround of CP testing is performed using the pads. Assuming the secondround of CP testing is positive, a chip-scale packaging (CSP) process isperformed. The semiconductor substrate is diced to individualize the ICdies and to expose sidewalls of the pads. Further, external links areformed extending along sidewalls of the IC dies, from direct contactwith the sidewalls of the pads to undersides of the IC dies.

A challenge with the method is that the pads are susceptible tocorrosion and other damage once opened for the first round of CPtesting. For example, chlorine ions and other contaminants producedduring subsequent processing (e.g., the first round of CP testing or theformation of the color filter arrays) may corrode the pads. Damaging thepads may negatively impact the functionality and performance of theCISs. For example, the damage may increase contact resistance of thepads to a point where the image sensing circuits may fail the secondround of CP testing. Further, damaging the pads may negatively impactthe reliability of the CISs. For example, the external links may poorlybond to the pads due to the damage to the pads, thereby causingdelamination over time. This may be exacerbated by chlorine ions orother contaminants diffusing into the external links, from the pads, anddamaging the external links.

In view of the foregoing, various embodiments of the present applicationprovide a method for forming an IC package (e.g., a CIS package) using aprotected CSP pad structure. In some embodiments, a semiconductorworkpiece comprising a scribe line region, a first IC die, a second ICdie, and a passivation layer is formed. The scribe line region separatesand adjoins the first and second IC dies, and the passivation layercovers the first and second IC dies. The first IC die comprises acircuit and a pad structure electrically coupled to the circuit. The padstructure comprises a first pad, a second pad, and a bridge. The bridgeis within the scribe line region and extends from the first pad to thesecond pad to connect the first pad to the second pad. The passivationlayer is patterned to expose the first pad, but not the second pad, andtesting (e.g., CP testing) is performed on the circuit through the firstpad. The semiconductor workpiece is cut along the scribe line region toindividualize the first and second IC dies, and to remove the bridge,while the passivation layer covers the second pad.

Once the passivation layer is patterned to expose the first pad, thefirst pad is subject to corrosion and other damage during subsequentprocessing. However, because the second pad remains covered by thepassivation layer during subsequent processing, the second pad is freeor substantially free of corrosion and other damage. Further, becausethe cutting removes the bridge, the second pad is independent of thefirst pad and not affected by the damage to the first pad. Accordingly,the second pad may be used to package the first IC die without concernfor corrosion and other damage. For example, an external link may beformed extending along a sidewall of the first IC, from lateral contactwith the second pad, to an underside of the first IC die. This, in turn,increases the functionality and reliability of the packaged first ICdie. For example, contact resistance between the second pad and theexternal link may be low. As another example, bonding performancebetween the second pad and the external link may be high.

With reference to FIGS. 1A-1C through FIGS. 4A-4C, a series of views100A-100C through 400A-400C of some embodiments of a method for formingan IC package using a protected CSP pad structure is provided. Figureswith a suffix of “A” are layout views 100A, 200A, 300A, 400A at variousstages of the method. Figures with a suffix of “B” are cross-sectionalviews 100B, 200B, 300B, 400B taken along line A-A′ in figures with asuffix of “A”. Figures with a suffix of “C” are cross-sectional views100C, 200C, 300C, 400C taken along line B-B′ in figures with a suffix of“A”.

As illustrated by the layout view 100A of FIG. 1A, a semiconductorworkpiece 102 comprising a first IC die 104 a and a second IC die 104 bis formed. In some embodiments, the semiconductor workpiece 102comprises additional IC dies (not shown). The first and second IC dies104 a, 104 b are enclosed by, and laterally spaced from each other by, ascribe line region 106 of the semiconductor workpiece 102. The scribeline region 106 is a region of the semiconductor workpiece 102 throughwhich a die saw travels to singulate the first IC die 104 a and thesecond IC die 104 b during subsequent processing.

The first and second IC dies 104 a, 104 b each comprise a circuit 108and a plurality of pad structures 110. For ease of illustration, onlysome of the pad structures 110 are labeled 110. The circuit 108 is at acenter of the IC die (e.g., 104 a or 104 b) and may be, for example, animage sensing circuit or some other circuit. In some embodiments, thecircuit 108 comprises a pixel sensor array 108 p and supportingcircuitry 108 s. Note that the hashing for each of the circuits 108 hasbeen varied between the pixel sensor array 108 p and the supportingcircuitry 108 s to make it easier to distinguish between these regions.The pixel sensor array 108 p may be, for example, at a center of thecircuit 108, and the supporting circuitry 108 s may be, for example, ata periphery of the circuit 108. Further, the supporting circuitry 108 ssupports operation of the pixel sensor array 108 p and may include, forexample, an image signal processor (ISP), read/write circuitry, andother supporting circuitry. The pad structures 110 laterally surroundthe circuit 108, along a boundary of the IC die, and are partiallywithin the scribe line region 106. Further, the pad structures 110 maybe or otherwise comprise, for example, copper, aluminum, aluminumcopper, some other conductive material, or any combination of theforegoing.

Each of the pad structures 110 comprises a first pad 110 f, a second pad110 s, and a bridge 110 b. For ease of illustration, the first pad 110 fis only labeled 110 f for some of the pad structures 110, the second pad110 s is only labeled 110 s for some of the pad structures 110, and thebridge 110 b is only labeled 110 b for some of the pad structures 110.Further, the hashing for each of the pad structures 110 has been variedbetween the first pad 110 f, the second pad 110 s, and the bridge 110 bto make it easier to distinguish between these regions of the padstructure. Notwithstanding this, it is to be understood that the firstpad 110 f, the second pad 110 s, and the bridge 110 b may, for example,be continuous (e.g., formed from a common deposition or a common pieceof material). As will become clear hereafter, the first pad 110 f mayalso be referred to as a CP pad, and the second pad 110 s may also bereferred to as a package pad. The first and second pads 110 f, 110 s arelaterally spaced along a boundary of an IC die (e.g., 104 a or 104 b),and the bridge 110 b extends from the first pad 110 f to the second pad110 s, along the boundary, to electrically couple the first and secondpads 110 f, 110 s. Further, whereas the first and second pads 110 f, 110s are at least partially outside of the scribe line region 106, thebridge 110 b is completely within the scribe line region 106. In someembodiments, each of the pad structures 110 has a U-shaped layout orsome other layout.

As illustrated by the cross-sectional view 100B of FIG. 1B, thesemiconductor workpiece 102 comprises a semiconductor substrate 112 andan interconnect structure 114. The semiconductor substrate 112 and theinterconnect structure 114 accommodate and at least partially define thecircuits 108. For example, the semiconductor substrate 112 may at leastpartially define semiconductor devices of the circuits 108, and theinterconnect structure 114 may interconnect the semiconductor devices ofthe circuits 108. The semiconductor devices may include, for example,transistors, photodiodes, and other semiconductor devices.

In some embodiments in which the circuits 108 comprise the pixel sensorarrays 108 p, the circuits 108 comprise a plurality of pixel sensors 116arranged in rows and columns to define the pixel sensor arrays 108 p.For ease of illustration, only some of the pixel sensors 116 are labeled116. The pixel sensors 116 may be, for example, active pixel sensors(APSs) or some other type of pixel sensor. Further, in some embodimentsin which the circuits 108 comprise the supporting circuitry 108 s, thecircuits 108 comprise a plurality of supporting devices 118 to at leastpartially define the supporting circuitry 108 s. The supporting devices118 may be or otherwise include, for example, metal-oxide-semiconductor(MOS) field-effect transistors (MOFSETs), insulated-gate field-effecttransistors (IGFETs), some other type of transistor, some other type ofsemiconductor device, or any combination of the foregoing.

The semiconductor substrate 112 underlies the interconnect structure 114and may be, for example, a bulk silicon substrate, asilicon-on-insulator (SOI) substrate, or some other type ofsemiconductor substrate. The interconnect structure 114 comprises aninterlayer dielectric (ILD) layer 120 and a passivation layer 122covering the ILD layer 120. The ILD layer 120 may be or otherwisecomprise, for example, silicon dioxide, a low κdielectric, some otherdielectric, or any combination of the foregoing. As used herein, a lowκdielectric is a dielectric with a dielectric constant κless than about3.9, 3.0, 2.0, or 1.0. The passivation layer 122 may be or otherwisecomprise, for example, silicon dioxide, silicon nitride, some otherdielectric, or any combination of the foregoing. The interconnectstructure 114 further comprise a plurality of conductive features.

The conductive features and the pad structures 110 are stacked withinthe ILD layer 120 and the passivation layer 122. The conductive featuresdefine conductive paths interconnecting devices of the circuit 108(e.g., the pixel sensors 116 and/or the supporting devices 118), andfurther electrically coupling the pad structures 110 to the circuit 108.In some embodiments, the conductive features electrically coupledirectly to the second pads 110 s of the pad structures 110, andindirectly to the first pads 110 f of the pad structures 110 (see FIG.1A) through the second pads 110 s and the bridges 110 b of the padstructures 110 (see FIG. 1A). The conductive features include wires 124w and vias 124 v. For ease of illustration, only some of the wires 124 ware labeled 124 w, and only some of the vias 124 v are labeled 124 v.The wires 124 w and/or the vias 124 v are or otherwise comprise copper,aluminum, aluminum copper, tungsten, some other conductive material, orany combination of the foregoing.

As illustrated by the cross-sectional view 100C of FIG. 1C, the firstand second pads 110 f, 110 s of a pad structure 110 are covered by thepassivation layer 122. The pad structure 110 may, for example, berepresentative of each other pad structure in FIGS. 1A and 1B. Becausethe passivation layer 122 covers the first and second pads 110 f, 110 s,the first and second pads 110 f, 110 s are protected from an ambientenvironment of the semiconductor workpiece 102, which may corrode orotherwise damage the first and second pads 110 f, 110 s.

As illustrated by the views 200A-200C of FIGS. 2A-2C, CP openings 202(see FIG. 2A or 2C) are formed in the passivation layer 122 (see FIGS.2B and 2C) to expose the first pads 110 f of the pad structures 110without exposing the second pads 110 s of the pad structures 110. Forease of illustration, only some of the CP openings 202 are labeled 202.In some embodiments, the CP openings 202 comprise a CP opening for eachof the first pads 110 f, and/or the CP openings 202 overlap the scribeline region 106. Further, in some embodiments, the CP openings 202 areformed by photolithography and an etching process.

In some embodiments, after the CP openings 202 are formed, a first roundof CP testing is performed on the circuits 108 using the first pads 110f of the pad structures 110. Depending upon results of the first roundof CP testing, the semiconductor workpiece 102 is scrapped or reworked,or proceeds to subsequent processing described hereafter. Further, insome embodiments, the first pads 110 f corrode or otherwise becomedamaged during the first round of CP testing due to exposure to anambient environment of the semiconductor workpiece 102. For example, thefirst pads 110 f may oxidize due to such exposure. Even though the firstpads 110 f corrode or otherwise become damaged, the second pads 110 s ofthe pad structures 110 remain undamaged and corrosion free because thesecond pads 110 s remain covered by the passivation layer 122 during thefirst round of CP testing.

As illustrated by the views 300A-300C of FIGS. 3A-3C, in someembodiments, an array 302 of color filters 304 (see FIG. 3B) and anarray 306 of micro-lenses 308 (see FIG. 3B) are formed stacked on thepassivation layer 122, overlying each of the pixel sensor arrays 108 p.For ease of illustration, only some of the color filters 304 are labeled304, and only some of the micro-lenses 308 are labeled 308. Further, forease of illustration, the array 302 of color filters 304 is only labeled302 for one of the pixel sensor arrays 108 p, and the array 306 ofmicro-lenses 308 is only labeled 306 for one of the pixel sensor arrays108 p.

Further, in some embodiments, after the array 302 of color filters 304and the array 306 of micro-lenses 308 are formed, a second round of CPtesting is performed on the circuits 108 using the first pads 110 f ofthe pad structures 110. Depending upon results of the second round of CPtesting, the semiconductor workpiece 102 is scrapped or reworked, orproceeds to subsequent processing described hereafter.

Also illustrated by the views 300A-300C of FIGS. 3A-3C, damage 310 (seeFIGS. 3A and 3C) forms on the first pads 110 f of the pad structures 110through the CP openings 202. The damage 310 may include, for example,corrosion and other damage. In some embodiments, the damage 310 formsduring the first round of CP testing, the second round of CP testing,while forming the array 302 of color filters 304 (see FIG. 3B) and thearray 306 of micro-lenses 308 (see FIG. 3B), or any combination of theforegoing. For example, the process for forming the array 302 of colorfilters 304 and an array 306 of micro-lenses 308 may use chlorine gasthat causes the damage 310. Because the second pads 110 s of the padstructures 110 were not exposed by the CP openings 202 for CP testingand remain covered by the passivation layer 122, the second pads 110 sremain undamaged and corrosion free.

As illustrated by the views 400A-400C of FIGS. 4A-4C, a CSP process isperformed to package the first and second IC dies 104 a, 104 b (seeFIGS. 3A-3C). For ease of illustration, only the first IC die 104 a isshown. The CSP process includes singulating the first and second IC dies104 a, 104 b by cutting the semiconductor workpiece 102 (see FIGS.3A-3C) along the scribe line region 106 (see FIG. 3A-3C). Thesingulation removes the bridges 110 b of the pad structures 110 (seeFIGS. 3A-3C), thereby physically and electrically separating the firstpads 110 f from the second pads 110 s. The singulation may, for example,be performed by a die saw or some other cutting tool. In someembodiments, processes performed between the singulation and the secondround of CP testing further cause corrosion or damage to the first pads110 f.

Additionally, the CSP process includes, for each of at least some (e.g.,all) of the second pads 110 s, forming an external link 402 (see FIGS.4A and 4B) extending along a sidewall of a corresponding IC die (e.g.,the first IC die 104 a or the second IC die 104 b), from lateral contactwith a sidewall of the second pad to an underside of the correspondingIC die. For ease of illustration, the external link 402 is only labeled402 for some of the second pads 110 s. Further, for ease ofillustration, the process by which the external link 402 is formed isdescribed hereafter with respect to a different series of figures. Theexternal link 402 may be, for example, aluminum copper, aluminum,copper, some other metal, or some other conductive material.

By separating the first pads 110 f from the second pads 110 s, the firstpads 110 f are electrically floating. Further, the second pads 110 s maybe used during the CSP process without concern for damage or otherdamage. The second pads 110 s are covered by the passivation layer 122and, hence, are free of corrosion and other corrosion. Further, becausethe second pads 110 s are separated from the first pads 110 f, thesecond pads 110 s are not affected by the damage 310 on the first pads110 f. Accordingly, contact resistance with the second pads 110 s islow, and the bond strength between the second pads and the externallinks 402 is high. This, in turn, enhances the functionality andreliability of the first and second IC dies 104 a, 104 b.

In some embodiments, the external links 402 are electrically insulatedfrom sidewalls of the semiconductor substrate 112 by an adhesive layer404 lining the sidewalls laterally between the semiconductor substrate112 and each of the external links 402. The adhesive layer 404 may be,for example, a dielectric epoxy or some other dielectric adhesive.Further, in some embodiments, the adhesive layer 404 secures a lowerinsulating plate 406 to the underside of the semiconductor substrate112, such that the adhesive layer 404 is vertically between the lowerinsulating plate 406 and the semiconductor substrate 112. The lowerinsulating plate 406 may be, for example, transparent, and/or may be,for example, glass or some other insulating material. In someembodiments, the external links 402 each extend along a sidewall of thelower insulating plate 406, and laterally along an underside of thelower insulating plate 406 to vertically between a barrier element 408and a conductive bump 410 on the underside. The barrier element 408blocks material of the conductive bump 410 from migrating to the lowerinsulating plate 406 and may be, for example, silicon oxide, siliconnitride, or some other dielectric. The conductive bump 410 iselectrically coupled to one of the second pads 110 s through acorresponding external links and may be, for example, solder or someother conductive material.

With reference to FIG. 5, a flowchart 500 of some embodiments of themethod of FIGS. 1A-1C through FIGS. 4A-4C is provided.

At 502, a semiconductor workpiece comprising a first IC die and a secondIC die is formed. The first and second IC dies are separated by a scribeline region and may be or otherwise comprise, for example, CISs. Thefirst IC die has a package pad and a CP pad that are connected by aconductive bridge. Further, the conductive bridge is within the scribeline region. See, for example, FIGS. 1A-1C.

At 504, an etch is performed into a passivation layer covering thepackage pad and the CP pad to form a CP opening exposing the CP pad, butnot the package pad. See, for example, FIGS. 2A-2C.

At 506, a first round of CP testing is performed on the first IC dieusing the CP pad through the CP opening.

At 508, color filters and micro-lenses are formed covering a pixelsensor array of the first IC die. The color filters and the micro-lensesare formed while the CP pad is exposed by the CP opening. See, forexample, FIGS. 3A-3C.

At 510, a second round of CP testing is performed on the first IC dieusing the CP pad through the CP opening.

At 512, a CSP process is performed to package the first and second ICdies. See, for example, FIGS. 4A-4C. The CSP process includes, at 512 a,cutting the semiconductor workpiece along the scribe line region toseparate the first and second IC dies and to remove the conductivebridge connecting the CP pad and the package pad. Further, the CSPprocess includes, at 512 b, forming an external link extending along asidewall of the first IC die, from lateral contact with a sidewall ofthe package pad to an underside of the first IC die.

The CP pad is used for CP testing after being exposed by the CP opening,while the package pad remains covered by the passivation layer and,hence, free of corrosion and other damage. Further, the cuttingseparates the CP and package pads, such that the package pad may be usedduring the CSP process without concern for corrosion or other damage.This may, in turn, may enhance the functionality and the reliability ofthe first and second IC dies, and may, in turn, enhance bondingperformance between the package pad and the external link.

While the flowchart 500 of FIG. 5 is illustrated and described herein asa series of acts or events, it will be appreciated that the illustratedordering of such acts or events is not to be interpreted in a limitingsense. For example, some acts may occur in different orders and/orconcurrently with other acts or events apart from those illustratedand/or described herein. Further, not all illustrated acts may berequired to implement one or more aspects or embodiments of thedescription herein, and one or more of the acts depicted herein may becarried out in one or more separate acts and/or phases.

With reference to FIGS. 6-9, 10A, 10B, 11, 12A, 12B, 13-19, 20A, 20B,and 21-26, a series of views 600-900, 1000A, 1000B, 1100, 1200A, 1200B,1300-1900, 2000A, 2000B, 2100-2600 of some more detailed embodiments ofa method for forming an IC package using a protected CSP pad structureis provided.

As illustrated by the cross-sectional view 600 of FIG. 6, asemiconductor workpiece 102 a comprising a first IC die 104 a and asecond IC die 104 b is provided. The first and second IC dies 104 a, 104b are laterally spaced from each other by a scribe line region 106, andeach comprises a circuit 108. In some embodiments, the circuit 108comprises a pixel sensor array 108 p and supporting circuitry 108 s. Thepixel sensor array 108 p may, for example, comprise a plurality of pixelsensors 116 arranged in rows and columns. For ease of illustration, onlysome of the pixel sensors 116 are labeled 116. The supporting circuitry108 s supports operation of the pixel sensor array 108 p and maycomprise, for example, a plurality of supporting devices 118.

The semiconductor workpiece 102 a further comprises a semiconductorsubstrate 112 and an interconnect structure 114 a. The semiconductorsubstrate 112 and the interconnect structure 114 a accommodate and atleast partially define the circuits 108. For example, the semiconductorsubstrate 112 may at least partially define devices of the circuits 108(e.g., the pixel sensors 116 and/or the supporting devices 118), and theinterconnect structure 114 a may interconnect the devices of thecircuits 108. The interconnect structure 114 a overlies thesemiconductor substrate 112, and comprises a lower ILD layer 120 a and aplurality of conductive features. The lower ILD layer 120 a may be orotherwise comprise, for example, silicon dioxide, a low κdielectric,some other dielectric, or any combination of the foregoing. Theconductive features are stacked within the lower ILD layer 120 anddefine conductive paths interconnecting the devices of the circuits 108.The conductive features include first wires 124 w ₁ and first vias 124 v₁. For ease of illustration, only some of the first wires 124 w ₁ arelabeled 124 w ₁, and only some of the first vias 124 v ₁ are labeled 124v ₁.

As illustrated by the cross-sectional view 700 of FIG. 7, an upper ILDlayer 120 b is formed covering the lower ILD layer 120 a. Further, theupper ILD layer 120 b is formed with a top surface that is planar orsubstantially planar. The upper ILD layer 120 b may be or otherwisecomprise, for example, silicon dioxide, a low κdielectric, some otherdielectric, or any combination of the foregoing. In some embodiments, aprocess for forming the upper ILD layer 120 b comprises depositing theupper ILD layer 120 b on the lower ILD layer 120 a, and subsequentlyperforming a planarization into a top of the upper ILD layer 120 b toflatten the top surface of the upper ILD layer 120 b. The depositionmay, for example, be performed by chemical vapor deposition (CVD),physical vapor deposition (PVD), sputtering, or some other depositionprocess. The planarization may, for example, be performed by a chemicalmechanical polish (CMP) or some other planarization process.

As illustrated by the cross-sectional view 800 of FIG. 8, the upper ILDlayer 120 b is patterned to define a plurality of feature openings 802with a layout of additional conductive features (e.g., pad structures,vias, and wires) under manufacture. For ease of illustration, only someof the feature openings 802 are labeled 802. Further, the featureopenings 802 expose conductive features along a bottom surface of theupper ILD layer 120 b. In some embodiments, the patterning is performedby one or more photolithography/etching processes. For example, a firstphotoresist mask (not shown) may be formed on the upper ILD layer 120 busing photolithography, and a first etch may be performed into the upperILD layer 120 with the first photoresist mask in place. The first etchmay extend into the upper ILD layer 120 b to a depth D_(e) that is lessthan a thickness T_(i) of the upper ILD layer 120 b to partially formthe feature openings 802. Thereafter, the first photoresist mask may bestripped and a second photoresist mask (not shown) may be formed on theupper ILD layer 120 b using photolithography. Further, a second etch maybe performed into the upper ILD layer 120 with the second photoresistmask in place, and the second photoresist mask may thereafter bestripped. The second etch extends into the upper ILD layer 120 b,through the feature openings 802 as partially formed, to expand thefeature openings 802 and to expose the conductive features along thebottom surface of the upper ILD layer 120 b.

As illustrated by the cross-sectional view 900 of FIG. 9, a firstconductive layer 902 is formed covering the upper ILD layer 120 b andfilling the feature openings 802 (see FIG. 8). The first conductivelayer 902 may be, for example, aluminum copper, copper, aluminum, someother metal, some other conductive material, or any combination of theforegoing. Further, the first conductive layer 902 may be formed by, forexample, CVD, PVD, sputtering, electroless plating, electroplating, someother deposition or plating process, or any combination of theforegoing.

As illustrated by the views 1000A, 1000B of FIGS. 10A and 10B, aplanarization is performed into the first conductive layer 902 (see FIG.9) to about even with a top surface of the upper ILD layer 120 b. FIG.10A provides a cross-sectional view 1000A along line A in FIG. 10B, andFIG. 10B provides a top view 1000B within box BX in FIG. 10A. Further,although not described with FIGS. 10A and 10B, FIG. 1A may, for example,be representative of the broader layout of the structure in FIGS. 10Aand 10B. The planarization forms a plurality of additional conductivefeatures within the feature openings 802 (see FIG. 8), and may, forexample, be performed by a CMP or some other planarization process.

The additional conductive features include second wires 124 w ₂, padstructures 110, and second vias 124 v ₂. For ease of illustration, onlysome of the second wires 124 w ₂ are labeled 124 w ₂. The pad structures110 are electrically coupled to the circuits 108 by underlyingconductive features, which may include, for example, at least some ofthe first and/or second vias 124 v ₁, 124 v ₂, and/or at least some ofthe first and/or second wires 124 w ₁, 124 w ₂. As seen in FIG. 10B,each of the pad structures 110 comprises a first pad 110 f, a second pad110 s, and a bridge 110 b. For ease of illustration, the hashing hasbeen varied between the first pad 110 f, the second pad 110 s, and thebridge 110 b to make it easier to distinguish between these regions ofthe pad structures 110. Notwithstanding this, it is to be understoodthat the first pad 110 f, the second pad 110 s, and the bridge 110 b arecontinuous (e.g., formed from a common piece of material) within each ofthe pad structure 110.

The first and second pads 110 f, 110 s for each of the pad structure 110are laterally spaced along a boundary of a corresponding IC die (e.g.,104 a or 104 b), and the bridge 110 b of the pad structure extends fromthe first pad 110 f to the second pad 110 s to electrically couple thefirst and second pads 110 f, 110 s. Further, whereas the first andsecond pads 110 f, 110 s are at least partially outside the scribe lineregion 106, the bridge 110 b is completely within the scribe line region106. As such, during singulation (e.g., cutting or dicing) of the firstand second IC dies 104 a, 104 b, the bridge 110 b is completely removed,whereas the first and second pads 110 f, 110 s are only partiallyremoved.

In some embodiments, the bridges 110 b of the pad structures 110 eachhave a bridge width W_(b) between about 5-10 micrometers, about 5-20micrometers, about 10-20 micrometers, or about 10-30 micrometers. Forexample, the bridge width W_(b) may be about 20 micrometers. In someembodiments, the scribe line region 106 has a scribe line width W_(s)between about 100-140 micrometers, about 110-130 micrometers, or about75-150 micrometers. For example, the scribe line width W_(s) may beabout 120 micrometers. Further, in some embodiments, the pad structures110 each overlap the scribe line region 106 with an overlapping padwidth W_(o) between about 10-30 micrometers, about 15-25 micrometers, orabout 5-50 micrometers. For example, the overlapping pad width W_(o) maybe about 20 micrometers, and/or may be the same as, or greater than, thebridge width W_(b). In some embodiments, the first and second pads 110f, 110 s of the pad structures 110 each have an effective pad widthW_(p) between about 50-100 micrometers, about 80-100 micrometers, about85-95 micrometers, or about 75-125 micrometers, and/or have a pad heightH_(p) between about 40-80 micrometers, 50-70 micrometers, or about50-120 micrometers. For example, the effective pad width W_(p) may beabout 90 or 120 micrometers, and the pad height H_(p) may be about 60micrometers, or vice versa. The effective pad width W_(p) is a totalwidth of a first or second pad less the overlapping pad width W_(o). Insome embodiments, the pad-to-pad distance D_(p) between neighboring padstructures respectively of the first and second IC dies 104 a, 104 b isabout 250-350 micrometers, about 290-310 micrometers, or about 275-325micrometers. The pad-to-pad distance D_(p) may be, for example, thescribe line width W_(s) plus two times the effective pad width W_(p).

Note that while FIGS. 7-9, 10A, 10B, and 11 illustrated adual-damascene-like process for forming the second wires 124 w ₂, thepad structures 110, and the second vias 124 v ₂, anotherdual-damascene-like process or a single-damascene-like process mayalternatively be employed. A dual-damascene-like process and asingle-damascene-like process are respectively dual-damascene and singledamascene processes that are not limited to copper.

As illustrated by the cross-sectional view 1100 of FIG. 11, an upperpassivation layer 122 is formed covering the upper ILD layer 120 b, thesecond wires 124 w ₂, the pad structures 110, and the second vias 124 v₂. Further, the upper passivation layer 122 is formed with a top surfacethat is planar or substantially planar. The upper passivation layer 122may be, for example, silicon dioxide, silicon nitride, some otherdielectric, or any combination of the foregoing. In some embodiments, aprocess for forming the upper passivation layer 122 comprises depositingthe upper passivation layer 122 on the upper ILD layer 120 b, andsubsequently performing a planarization into the upper passivation layer122 to flatten the top surface of the upper passivation layer 122. Thedeposition may, for example, be performed by CVD, PVD, sputtering, orsome other deposition process. The planarization may, for example, beperformed by a CMP or some other planarization process.

As illustrated by the views 1200A, 1200B of FIGS. 12A and 12B (best seenin FIG. 12B), the upper passivation layer 122 is patterned to form CPopenings 202 overlying and exposing the first pads 110 f (see FIG. 12B)of the pad structures 110. FIG. 12A provides a cross-sectional view1200A along line A in FIG. 12B, and FIG. 12B provides a top view 1200Bwithin box BX in FIG. 12A. Further, although not described with FIGS.12A and 12B, FIG. 2A may, for example, be representative of the broaderlayout of the structure in FIGS. 12A and 12B. In some embodiments, thepatterning is performed by a photolithography/etching processes. Forexample, a photoresist mask (not shown) may be formed on the upperpassivation layer 122, and an etch may be performed into the upperpassivation layer 122 with the photoresist mask in place. Thephotoresist mask may, for example, have a layout of the CP openings 202and may, for example, be formed using photolithography. The etch extendsthrough the upper passivation layer 122 and stops on the first pads 110f of the pad structures 110.

In some embodiments, after the CP openings 202 are formed, a first roundof CP testing is performed on the circuits 108 using the first pads 110f of the pad structures 110. Depending upon results of the first roundof CP testing, the semiconductor workpiece 102 a is scrapped orreworked, or proceeds to subsequent processing described hereafter.Further, in some embodiments, the first pads 110 f corrode or otherwisebecome damaged during the first round of CP testing due to exposure toan ambient environment of the semiconductor workpiece 102 a. Forexample, the first pads 110 f may oxidize due to such exposure.

As illustrated by the cross-sectional view 1300 of FIG. 13, in someembodiments, an array 302 of color filters 304 and an array 306 ofmicro-lenses 308 are formed stacked on the upper passivation layer 122,overlying each of the pixel sensor arrays 108 p. For ease ofillustration, only some of the color filters 304 are labeled 304, andonly some of the micro-lenses 308 are labeled 308. Further, for ease ofillustration, the array 302 of color filters 304 is only labeled 302 forone of the pixel sensor arrays 108 p, and the array 306 of micro-lenses308 is only labeled 306 for one of the pixel sensor arrays 108 p.

Further, in some embodiments, after the array 302 of color filters 304and the array 306 of micro-lenses 308 are formed, a second round of CPtesting is performed on the circuits 108 using the first pads 110 f ofthe pad structures 110 (see FIG. 12B). Depending upon results of thesecond round of CP testing, the semiconductor workpiece 102 a isscrapped or reworked, or proceeds to subsequent processing describedhereafter. In some embodiments, the first pads 110 f corrode orotherwise become damaged while forming the array 302 of color filters304 and the array 306 of micro-lenses 308, and/or during the secondround of CP testing, due to exposure to an ambient environment of thesemiconductor workpiece 102 a. For example, chlorine ions used whileforming the color filters 304 an the micro-lenses 308 may damage thefirst pads 110 f.

As illustrated by the cross-sectional view 1400 of FIG. 14, a dam layer1402 is formed on the upper passivation layer 122, overlying the scribeline region 106. The dam layer 1402 is dielectric and may be, forexample, photoresist or some other dielectric material. Further, the damlayer 1402 may, for example, have a ring-shaped layout (not visible inthe cross-sectional view 1400) with a pair of ring-shaped segmentsrespectively encircling the first and second IC dies 104 a, 104 b. Insome embodiments, a process for forming the dam layer 1402 comprisesdepositing the dam layer 1402 and subsequently patterning the dam layer.The depositing may, for example, be performed by spin coating or someother deposition process, and/or the patterning may, for example, beperformed using photolithography.

Also illustrated by the cross-sectional view 1400 of FIG. 14, an upperadhesive layer 1404 is formed overlying the dam layer 1402. The upperadhesive layer 1404 may be, for example, an epoxy or some otheradhesive. Further, the upper adhesive layer 1404 may, for example, havethe same, or substantially the same, layout as the dam layer 1402. Insome embodiments, the upper adhesive layer 1404 is formed by a printingprocess or some other deposition process.

As illustrated by the cross-sectional view 1500 of FIG. 15, an upperinsulating plate 1502 is bonded to the upper passivation layer 122through the dam layer 1402 and the upper adhesive layer 1404. The upperadhesive layer 1404 adheres the upper insulating plate 1502 to upperpassivation layer 122 through the dam layer 1402. The upper insulatingplate 1502 is transparent and may be, for example, glass or some otherinsulating material. Although not visible in the cross-sectional view1500, in some embodiments, the bonding seals (e.g., hermetically sales)a cavity 1506 overlying each of the circuits 108.

As illustrated by the cross-sectional view 1600 of FIG. 16, thesemiconductor substrate 112 is thinned to reduce a thickness T_(s) ofthe semiconductor substrate 112. In some embodiments, the semiconductorsubstrate 112 is thinned by a CMP, some other planarization process, orsome other thinning process.

As illustrated by the cross-sectional view 1700 of FIG. 17, thesemiconductor substrate 112 is patterned to define a scribe line opening1702 in the scribe line region 106. The scribe line opening 1702 exposesthe lower ILD layer 120 a and may, for example, be confined to thescribe line region 106. In some embodiments, the patterning is performedby a photolithography/etching processes. For example, a photoresist mask(not shown) may be formed on the semiconductor substrate 112, and anetchant may thereafter be applied to the semiconductor substrate 112through the photoresist mask. The photoresist mask may be formed by, forexample, depositing a photoresist layer on the semiconductor substrate112 and patterning the photoresist layer with a layout of the scribeline opening 1702. The depositing may, for example, be performed by spincoating or some other deposition process, and/or the patterning may, forexample, be performed by photolithography. Thereafter, the photoresistmask may be stripped. The etchant may have a high etch rate for thesemiconductor substrate 112, relative to the lower ILD layer 120 a, suchthat the lower ILD layer 120 a serves as an etch stop.

As illustrated by the cross-sectional view 1800 of FIG. 18, a loweradhesive layer 404 is formed on the semiconductor substrate 112, andfurther filling the scribe line opening 1702 (see FIG. 17). The loweradhesive layer 404 may, for example, be an epoxy or some other adhesive.In some embodiments, the lower adhesive layer 404 is formed by aprinting process or some other deposition process.

Also illustrated by the cross-sectional view 1800 of FIG. 18, a lowerinsulating plate 406 is bonded to the semiconductor substrate 112through the lower adhesive layer 404. The lower insulating plate 406may, for example, be transparent, and/or may, for example, be glass orsome other insulating material.

Also illustrated by the cross-sectional view 1800 of FIG. 18, a barrierlayer 1802 is formed on the lower insulating plate 406, such that thelower insulating plate 406 vertically spaces the barrier layer 1802 fromthe lower adhesive layer 404. The barrier layer 1802 may be, forexample, silicon oxide, silicon nitride, or some other dielectric,and/or may, for example, be formed by CVD, PVD, or some other depositionprocess.

As illustrated by the cross-sectional view 1900 of FIG. 19, the barrierlayer 1802 (see FIG. 18) is patterned to form a pair of barrier elements408 respectively under the circuits 108, on the lower insulating plate406. As seen hereafter, the barrier elements 408 correspond toconductive bumps (or balls) formed hereafter. In some embodiments, thepatterning is performed by a photolithography/etching processes. Forexample, a photoresist mask (not shown) may be formed on the barrierlayer 1802, and an etchant may thereafter be applied to the barrierlayer 1802 through the photoresist mask. The photoresist mask may, forexample, be formed by depositing a photoresist layer on the barrierlayer 1802 and patterning the photoresist layer with a layout of barrierelements 408. The depositing may, for example, be performed by spincoating or some other deposition process, and/or the patterning may, forexample, be performed by photolithography. Thereafter, the photoresistmask may be stripped. The etchant may have a high etch rate for thebarrier layer 1802, relative to the lower insulating plate 406, suchthat the lower insulating plate 406 serves as an etch stop.

As illustrated by the views 2000A, 2000B of FIGS. 20A and 20B, the loweradhesive layer 404, the lower insulating plate 406, the semiconductorworkpiece 102 a, the upper ILD layer 122 b, the upper passivation layer122, the pad structures 110, the dam layer 1402, and the upper adhesivelayer 1404 are cut along the scribe line region 106 to define a notch2002 overlapping with the scribe line region 106. FIG. 20A provides across-sectional view 2000A along line A in FIG. 20B, and FIG. 20Bprovides a top view 2000B taken within box BX in FIG. 20A. Further,although not described with FIGS. 20A and 20B, FIG. 4A may, for example,be representative of the broader layout of each of the first and secondIC dies 104 a, 104 b upon completion of the cutting. The cuttingsingulates/individualizes the first and second IC dies 104 a, 104 b andmay be, for example, performed by a die saw or some other cutting tool.Further, the cutting removes the bridges 110 b of the pad structures 110(see FIG. 10B) to physically and electrically separate the first pads110 f from the second pads 110 s.

By separating the first pads 110 f from the second pads 110 s, the firstpads 110 f are electrically floating. Further, because the second pads110 s are separated from the first pads 110 f, the second pads 110 s arenot affected by damage on the first pads 110 f. Such damage may occurduring preceding processes through the CP openings 202. Further yet,because the second pads 110 s remained covered by the upper passivationlayer 122 during the preceding processes, the second pads 110 s are freeof corrosion and other damage.

As illustrated by the cross-sectional view 2100 of FIG. 21, a secondconductive layer 2102 is formed lining the barrier elements 408 and thenotch 2002, and further laterally contacting sidewalls of the padstructures 110. The second conductive layer 2102 may be or comprise, forexample, aluminum copper, copper, aluminum, some other metal, or someother conductive material. The second conductive layer 2102 may, forexample, be formed conformally, and/or may, for example, be formed byCVD, PVD, electroless plating, electroplating, or some other depositionor plating process.

As illustrated by the cross-sectional view 2200 of FIG. 22, the secondconductive layer 2102 (see FIG. 21) is patterned to define a externallink 402 extending from one of the barrier elements 408 corresponding tothe first IC die 104 a, along sidewalls of the notch 2002 and sidewallsof the pad structures 110, to another one of the barrier elements 408corresponding to the second IC die 104 b. In some embodiments, thepatterning is performed by a photolithography/etching processes. Forexample, a photoresist mask (not shown) may be formed on the secondconductive layer 2102, and an etchant may thereafter be applied to thesecond conductive layer 2102 through the photoresist mask. Thephotoresist mask may, for example, be formed by depositing a photoresistlayer on the second conductive layer 2102 and patterning the photoresistlayer with a layout of the external link 402. The depositing may, forexample, be performed by spin coating or some other deposition process,and/or the patterning may, for example, be performed byphotolithography. Thereafter, the photoresist mask may be stripped.

As illustrated by the cross-sectional view 2300 of FIG. 23, a lowerpassivation layer 2302 is formed lining the notch 2002 on the externallink 402, and further lining the lower insulating plate 406 and thebarrier elements 408. The lower passivation layer 2302 may be orotherwise comprise, for example, silicon nitride, silicon oxide, or someother dielectric. The lower passivation layer 2302 may, for example,formed by CVD, PVD, or some other deposition process.

As illustrated by the cross-sectional view 2400 of FIG. 24, the lowerpassivation layer 2302 is patterned to define barrier openings 2402respectively exposing portions of the external link 402 on the barrierelements 408. In some embodiments, the patterning is performed by aphotolithography/etching processes. For example, a photoresist mask (notshown) may be formed on the lower passivation layer 2302, and an etchantmay thereafter be applied to the lower passivation layer 2302 throughthe photoresist mask. The photoresist mask may, for example, be formedby depositing a photoresist layer on the lower passivation layer 2302and patterning the photoresist layer with a layout of the barrieropenings 2402. The depositing may, for example, be performed by spincoating or some other deposition process, and/or the patterning may, forexample, be performed by photolithography. Thereafter, the photoresistmask may be stripped.

As illustrated by the cross-sectional view 2500 of FIG. 25, conductivebumps 410 are formed on the external link 402, within the barrieropenings 2402 (see FIG. 24), to define a BGA 2502 underlying each of thecircuits 108. The conductive bumps 410 are may be, for example, solderor some other conductive material, and/or may be formed by, for example,depositing solder in the barrier openings 2402 and subsequentlyperforming reflow process to reform the deposited solder into theconductive bumps 410. The conductive bumps 410 are electrically coupledto the external link 402, and are further electrically coupled to thepad structures 110 through the external link 402. Further yet, theconductive bumps 410 are electrically coupled to the circuits 108through the pad structures 110.

As illustrated by the cross-sectional view 2600 of FIG. 26, the upperinsulating plate 1502, the external link 402, and the lower passivationlayer 2302 are cut along the scribe line region 106. The cuttingseparates the upper insulating plate 1502 into a pair of plate segmentsindividual to first and second IC dies 104 a, 104 b. Similarly, thecutting separates the external link 402 into a pair of external linksegments individual to the first and second IC dies 104 a, 104 b, andseparates the lower passivation layer 2302 into a pair of lowerpassivation segments individual to the first and second IC dies 104 a,104 b. The cutting may be, for example, performed by a die saw or someother cutting tool.

With reference to FIG. 27, a flowchart 2700 of some embodiments of themethod of FIGS. 6-9, 10A, 10B, 11, 12A, 12B, 13-19, 20A, 20B, and 21-26is provided.

At 2702, a semiconductor workpiece comprising a first IC die and asecond IC die is formed. The first and second IC dies are separated by ascribe line region. The first IC die has a package pad and a CP pad thatare connected by a conductive bridge. See, for example, FIGS. 6-9, 10A,10B, and 11.

At 2704, an etch is performed into a passivation layer covering thepackage pad and the CP pad to form a CP opening exposing the CP pad, butnot the package pad. See, for example, FIGS. 12A and 12B. In someembodiments, a first round of CP testing is thereafter performed on thefirst IC die through the CP opening.

At 2706, color filters and micro-lenses are formed covering a pixelsensor array of the first IC die after the etch and, in someembodiments, after the first round of CP testing. The color filters andthe micro-lenses are formed while the CP pad is exposed by the CPopening. See, for example, FIG. 13. In some embodiments, a second roundof CP testing is thereafter performed on the first IC die through the CPopening.

At 2708, a CSP process is performed to package the first and second ICdies after forming the color filters and the micro-lenses and, in someembodiments, after the second round of CP testing. See, for example,FIGS. 14-19, 20A, 20B, and 21-26.

At 2708 a, a first insulating plate is bonded to a front side of thesemiconductor workpiece. See, for example, FIGS. 14 and 15. At 2708 b, aback side of the semiconductor workpiece is thinned. See, for example,FIG. 16. At 2708 c, an etch is performed into the back side of thesemiconductor workpiece to form a scribe line opening in the scribe lineregion. See, for example, FIG. 17. At 2708 d, a second insulating plateis bonded to the back side of the semiconductor workpiece. See, forexample, FIG. 18. At 2708 e, the second insulating plate and thesemiconductor workpiece are cut along the scribe line region to separatethe first and second IC dies and remove the conductive bridge. See, forexample, FIGS. 20A and 20B. At 2708 f, a external link is formedextending along a sidewall of the first IC die, from lateral contactwith a sidewall of the package pad to an underside of the secondinsulating plate. See, for example, FIGS. 21 and 22. At 2708 g, a BGA isformed on the underside of the second insulating plate, electricallycoupled to the first IC die by the package pad and the external link.See, for example, FIGS. 23-25. At 2708 h, the second insulating plate iscut along the scribe line region. See, for example, FIG. 26.

The CP pad is used for CP testing after being exposed by the CP opening,while the package pad remains covered by the passivation layer and,hence, free of corrosion and other damage. Further, the cuttingseparates the CP and package pads, such that the package pad may be usedduring the CSP process without concern for corrosion and other damage.This may, in turn, may enhance the functionality and the reliability ofthe first and second IC dies, and may, in turn, enhance bondingperformance between the package pad and the external link.

While the flowchart 2700 of FIG. 27 is illustrated and described hereinas a series of acts or events, it will be appreciated that theillustrated ordering of such acts or events is not to be interpreted ina limiting sense. For example, some acts may occur in different ordersand/or concurrently with other acts or events apart from thoseillustrated and/or described herein. Further, not all illustrated actsmay be required to implement one or more aspects or embodiments of thedescription herein, and one or more of the acts depicted herein may becarried out in one or more separate acts and/or phases.

With reference to FIGS. 28A-28C, views 2800A-2800C of some embodimentsof the IC package formed according to the method of FIG. 27 is provided.FIG. 28A provides a cross-sectional view 2800A along line A in FIGS. 28Band 28C. FIGS. 28B and 28C provide top views 2800B, 2800C respectivelywithin box BX1 in FIG. 28A and box BX2 in FIG. 28A. As illustrated, alower insulating plate 406 is bonded to a back side 112 b of asemiconductor substrate 112 by a lower adhesive layer 404. In someembodiments, the lower adhesive layer 404 cups the back side 112 b ofthe semiconductor substrate 112, such that the lower adhesive layer 404lines a bottom surface of the semiconductor substrate 112 and sidewallsof the semiconductor substrate 112.

A BGA 2502 underlies the lower insulating plate 406, on an opposite sideof the lower insulating plate 406 as the semiconductor substrate 112.The BGA 2502 comprises a plurality of conductive bumps 410, eachvertically spaced from the lower insulating plate 406 by a barrierelement 408 and an external link 402. For ease of illustration, onlysome of the conductive bumps 410 are labeled 410. Further, for easeillustration, the external link 402 and the barrier element 408 are onlylabeled for some of the conductive bumps 410. The external link 402 isvertically between the barrier element 408 and the corresponding one ofthe conductive bumps 410, and electrically couples the solder bump to atleast one of a plurality of pad structures 110 overlying thesemiconductor substrate 112. Further, the external link 402 is lined bya lower passivation layer 2302.

The pad structures 110 are electrically coupled to a circuit 108 on afront side 112 f of the semiconductor substrate 112, such that theconductive bumps 410 are electrically coupled to the circuit 108 throughthe external links 402 and the pad structures 110. The circuit 108 may,for example, be an image sensing circuit or some other circuit. In someembodiments, the circuit 108 comprises a pixel sensor array 108 p andsupporting circuitry 108 s. The pixel sensor array 108 p may, forexample, comprise a plurality of pixel sensors 116 arranged in rows andcolumns. For ease of illustration, only one of the pixel sensors 116 islabeled 116. The supporting circuitry 108 s supports operation of thepixel sensor array 108 p and may comprise, for example, a plurality ofsupporting devices 118. The supporting devices 118 may include, forexample, an ISP, read/write devices, and other supporting devices.

The semiconductor substrate 112 and an interconnect structure 114 atleast partially define the circuit 108. The interconnect structure 114overlies the semiconductor substrate 112, and comprises a lower ILDlayer 120 a, an upper ILD layer 120 b, and an upper passivation layer122. The upper ILD layer 120 b overlies the lower ILD layer 120 a, andthe upper passivation layer 122 overlies the upper ILD layer 120 b.Further, the interconnect structure 114 comprises a plurality ofconductive features. The conductive features are stacked within thelower ILD layer 120 a, the upper ILD layer 120 b, and the upperpassivation layer 122 and define conductive paths interconnectingdevices of the circuit 108. The conductive features include wires 124 w,vias 124 v, and the pad structures 110. For ease of illustration, onlysome of the wires 124 w are labeled 124 w, and only some of the vias 124v are labeled 124 v.

In some embodiments, an array 302 of color filters 304 and an array 306of micro-lenses 308 are stacked directly over the pixel sensor array 108p. In some embodiments, the color filters 304 are recessed into a top ofthe upper passivation layer 122, and/or the micro-lenses 308respectively overlie the color filters 304. The color filters 304 eachpass an assigned range of wavelengths (e.g., red wavelengths), whileblocking wavelengths outside the assigned range. The color filters 304may, for example, define a Bayer color filter mosaic. The micro-lenseseach focus incident radiation respectively on an underlying one of thepixel sensors 116.

A dam layer 1402 overlies the upper passivation layer 122 and extendslaterally along a periphery of the upper passivation layer 122 tolaterally surround the circuit 108. In some embodiments, the dam layer1402 has a ring-shaped layout or some other closed-path layout. Further,an upper insulating plate 1502 overlies and is bonded to the dam layer1402 by an upper adhesive layer 1404. The upper insulating plate 1502 istransparent and covers the circuit 108. In some embodiments, a cavity1506 is sealed (e.g., hermetically sealed) between the upper insulatingplate 1502 and the upper passivation layer 122.

As illustrated by the top views 2800B, 2800C of FIGS. 28B and 28C, eachof the pad structures 110 comprises a first pad 110 f and a second pad110 s. The first pads 110 f have damage 310 due to exposure through CPopenings 202 in the upper passivation layer 122 (see FIG. 28A) duringformation of the IC package. In some embodiments, the CP openings 202are filled by the dam layer 1402 (see FIG. 28A) and/or the upperadhesive layer 1404 (see FIG. 28A). Further yet, the first pads 110 fare electrically floating and independent of the second pads 110 s dueto removal of conductive bridges (not shown) of the pad structures 110during formation of the IC package. The second pads 110 s are completelyor substantially covered by the upper passivation layer 122 (see FIG.28A), and hence are devoid of corrosion or other damage. Further,whereas the first pads 110 f are electrically floating, the second pads110 s are electrically coupled to the external links 402 and some of thevias 124 v.

In some embodiments of the present application are directed towards amethod for forming an IC package including: forming a semiconductorworkpiece including a scribe line region, a first IC die, and a secondIC die, wherein the scribe line region separates and adjoins the firstand second IC dies, wherein the first IC die includes a circuit and apad structure electrically coupled to the circuit, wherein the padstructure includes a first pad, a second pad, and a bridge, and whereinthe bridge is within the scribe line region and extends from the firstpad to the second pad to connect the first pad to the second pad; andcutting the semiconductor workpiece along the scribe line region toindividualize the first and second IC dies, wherein the cutting removesthe bridge to separate the first and second pads. In some embodiments,the semiconductor workpiece includes a passivation layer covering thefirst pad and the second pad, wherein the method further includesperforming an etch into the passivation layer to form an openingexposing the first pad, but not the second pad, and wherein the cuttingis performed while the second pad is completely covered by thepassivation layer. In some embodiments, the method further includesperforming CP testing on the circuit using the first pad through theopening. In some embodiments, the first IC die further includes an arrayof pixel sensors, wherein the method further includes: forming an arrayof color filters overlying the array of pixel sensors and recessed intoa top of the passivation layer; and forming an array of micro-lensesoverlying the array of color filters. In some embodiments, the methodfurther includes: performing a first round of CP testing on the circuitusing the first pad through the opening, wherein the first round of CPtesting is performed between the performing of the etch and the formingthe array of color filters; and performing a second round of CP testingon the circuit using the first pad through the opening, wherein thesecond round of CP testing is performed between the forming of the arrayof micro-lenses and the cutting of the semiconductor workpiece. In someembodiments, the method further includes forming corrosion on the firstpad between the performing of the etch and the cutting of thesemiconductor workpiece, wherein the corrosion forms on the first padthrough the opening, and wherein the second pad is substantially free ofcorrosion during the cutting of the semiconductor workpiece. In someembodiments, the first pad is formed electrically coupled to the circuitthrough the second pad and the bridge, wherein the first pad iselectrically floating upon completion of the cutting. In someembodiments, the pad structure has a U-shaped layout before the cutting.In some embodiments, the method further includes: after the cutting,forming an external link extending along a sidewall of the first IC die,from lateral contact with a sidewall of the second pad to an undersideof the first IC die; and forming a solder bump on the underside of thefirst IC die, wherein the solder bump is electrically coupled to thecircuit through the second pad and the external link.

In some embodiments of the present application are directed towards anIC package including: an IC die including a circuit, a first pad, asecond pad, and a passivation layer, wherein the passivation layercovers the second pad and defines an opening overlying the first pad,wherein the first pad is electrically floating and has a top surfacethat is damaged, wherein the second pad is electrically coupled to thecircuit and has a top surface substantially free of damage, and whereinthe first pad, the second pad, and the passivation layer partiallydefine a common sidewall of the IC die; and an external link extendingfrom a bottom of the IC die, along the common sidewall, to lateralcontact with the second pad. In some embodiments, the IC die furtherincludes a pixel sensor array, wherein the IC package further includes:an array of color filters overlying the pixel sensor array and recessedinto a top of the passivation layer; and an array of micro-lensesoverlying the array of color filters. In some embodiments, the ICfurther includes: an adhesive layer overlying the passivation layer andpartially defining the common sidewall; and a transparent plate coveringthe micro-lenses and the passivation layer, and further adhered to thepassivation layer through the adhesive layer. In some embodiments, theIC further includes: a semiconductor substrate; and an interconnectstructure overlying the semiconductor substrate, wherein theinterconnect structure includes an ILD layer, a plurality of wires, anda plurality of vias, wherein the wires and the vias are alternatinglystacked within the ILD layer, wherein the passivation layer covers theILD layer, wherein the circuit is at least partially defined by thesemiconductor substrate and the interconnect structure, and wherein theILD layer partially defines the common sidewall. In some embodiments,the external link laterally contacts the ILD layer, the passivationlayer, and the second pad at the common sidewall. In some embodiments,the IC further includes: an adhesive layer cupping an underside of thesemiconductor substrate, such that the adhesive layer lines sidewalls ofthe semiconductor substrate, wherein the adhesive layer partiallydefines the common sidewall; and an insulating plate adhered to theunderside of the semiconductor substrate through the adhesive layer,wherein the external link extends from an underside of the insulatingplate to the second pad. In some embodiments, the IC further includes aBGA on the underside of the insulating plate, wherein the external linkextends from the second pad to the BGA and electrically couples the BGAto the second pad.

In some embodiments of the present application are directed towardsanother method for forming an IC package including: forming asemiconductor workpiece including a scribe line region, a first IC die,and a second IC die, wherein the scribe line region separates andadjoins the first and second IC dies, wherein the first IC die includesa circuit; forming a U-shaped pad structure on the first IC die, whereinthe U-shaped pad structure includes a first pad, a second pad, and abridge, wherein the bridge is within the scribe line region and extendsfrom the first pad to the second pad to connect the first and secondpads, and wherein the first pad is electrically coupled to the circuitthrough the bridge and the second pad; forming a passivation layercovering the semiconductor workpiece and the U-shaped pad structure;performing an etch into the passivation layer to form a CP openingexposing the first pad, but not the second pad; performing a first roundof CP testing on the circuit using the first pad through the CP opening;forming an array of color filters overlying the circuit and thepassivation layer; forming an array of micro-lenses overlying the arrayof color filters; performing a second round of CP testing on the circuitusing the first pad through the CP opening; cutting the semiconductorworkpiece along the scribe line region to individualize the first andsecond IC dies, wherein the cutting removes the bridge to separate thefirst and second pads, and wherein the first pad is electricallyfloating upon completion of the cutting; and forming an external linkextending along a sidewall of the first IC die, from lateral contactwith a sidewall of the second pad to an underside of the first IC die.In some embodiments, the method further includes forming corrosion onthe first pad between the performing of the etch and the cutting,wherein the second pad is free of corrosion at the cutting. In someembodiments, the forming of the semiconductor workpiece includes:forming semiconductor devices in a top of a semiconductor substrate; andforming an interconnect structure covering the semiconductor devices andthe semiconductor substrate, wherein the interconnect structure includesa lower ILD layer, a plurality of wires, and a plurality of vias,wherein the wires and the vias are alternatingly stacked in the lowerILD layer, and wherein the semiconductor devices and the interconnectstructure at least partially define the circuit. In some embodiments,the forming of the pad structure includes: forming an upper ILD layercovering the lower ILD layer; patterning the upper ILD layer to definefeature openings in the upper ILD layer with a layout of the padstructure; forming a conductive layer filling the feature openings andcovering the upper ILD layer; and performing a planarization into theconductive layer to about even with a top surface of the upper ILD layerto form the pad structure from the conductive layer, wherein the padstructure is electrically coupled to the semiconductor devices throughthe wires and the vias.

In some embodiments of the present application are directed towardsanother IC package including: a semiconductor substrate; semiconductordevices in a top of the semiconductor substrate; an interconnectstructure covering the semiconductor devices and the semiconductorsubstrate, wherein the interconnect structure includes an ILD layer, aplurality of vias, and a plurality of wires, wherein the vias and thewires are alternatingly stacked in the ILD layer; a first pad and asecond pad on the ILD layer, wherein the first pad is electricallyfloating and has a top surface that is corroded, wherein the second padis electrically coupled to at least one of the semiconductor devices bythe vias and the wires, and wherein the first pad, the second pad, andthe ILD layer partially define a common sidewall; a passivation layercompletely covering the second pad and partially defining the commonsidewall; and an external link extending along the common sidewall, fromlateral contact with the second pad to an underside of the semiconductorsubstrate. In some embodiments, the IC package further includes a BGA onthe underside of the semiconductor substrate, wherein the BGA iselectrically coupled to the semiconductor devices through the externallink and the second pad. In some embodiments, the IC package furtherincludes: an adhesive layer cupping the underside of the semiconductorsubstrate, such that the adhesive layer lines a bottom surface of thesemiconductor substrate and sidewalls of the semiconductor substrate;and an insulating plate adhered to the underside of the semiconductorsubstrate through the adhesive layer, wherein the insulating plate andthe adhesive layer partially define the common sidewall, and wherein theBGA is under the insulating plate. In some embodiments, thesemiconductor devices include a plurality of pixel sensors defining apixel sensor array, wherein the IC package further includes a pluralityof color filters overlying the passivation layer and the pixel sensorarray, and wherein the color filters are recessed into a top of thepassivation layer. In some embodiments, the IC package further includes:an adhesive layer overlying the passivation layer and extendinglaterally along a perimeter of the passivation layer to enclose thecolor filters; and a transparent plate overlying the passivation layerand the color filters, wherein the transparent plate is adhered to thepassivation layer by the adhesive layer. In some embodiments, thetransparent plate, the passivation layer, and the adhesive layer atleast partially define a hermetically cavity around the color filters.In some embodiments, the IC package further includes a third pad and afourth pad on the ILD layer, wherein the third pad is electricallyfloating and has a top surface that is corroded, wherein the fourth padis electrically coupled to the semiconductor devices by the vias and thewires, wherein the third pad, the fourth pad, the ILD layer, and thepassivation layer partially define a second common sidewall, and whereinthe second common sidewall and the common sidewall are on opposite sidesof the interconnect structure.

In some embodiments of the present application are directed towards yetanother IC package including: a semiconductor substrate; a plurality ofsemiconductor devices in a top of the semiconductor substrate; a loweradhesive layer cupping an underside of the semiconductor substrate, suchthat the lower adhesive layer lines a bottom surface of thesemiconductor substrate and sidewalls of the semiconductor substrate; alower insulating plate adhered to the underside of the semiconductorsubstrate through the lower adhesive layer; a BGA on an underside of thelower insulating plate; an interconnect structure covering thesemiconductor devices and the semiconductor substrate, wherein theinterconnect structure includes an ILD layer, a plurality of vias, and aplurality of wires, wherein the vias and the wires are alternatinglystacked in the ILD layer; a passivation layer covering the interconnectstructure; a first pad and a second pad both overlying the interconnectstructure, between the interconnect structure and the passivation layer,wherein the first pad is electrically floating and has a top surfacethat is corroded, wherein the second pad is electrically coupled to atleast one of the semiconductor devices by the vias and the wires and hasa top surface free of corrosion, and wherein the first pad, the secondpad, the ILD layer, the passivation layer, the lower adhesive layer, andthe lower insulating plate partially define a common sidewall; and anexternal link extending along the common sidewall, from laterallycontact with the second pad to the BGA. In some embodiments, the ICpackage further includes: a color filter array overlying the passivationlayer and recessed into a top of the passivation layer; a micro-lensarray overlying the color filter array; an upper adhesive layeroverlying the passivation layer and extending laterally around the colorfilter array, wherein the upper adhesive layer partially defines thecommon sidewall; and an upper insulating plate covering the micro-lensesand the passivation layer, and wherein the upper insulating plate isadhered to the passivation layer by the upper adhesive layer. In someembodiments, the upper adhesive layer, the passivation layer, and theupper insulating plate define a hermetically sealed cavity around themicro-lens array. In some embodiments, the BGA includes a plurality ofconductive bumps, wherein the IC package further includes a plurality ofbarrier elements on the underside of the lower insulating plate, whereinthe barrier elements respectively space the conductive bumps from thelower insulating plate, and wherein the external link is directlybetween one of the conductive bumps and one of the barrier elements.

In some embodiments of the present application are directed towards yetanother method for forming an IC package including: forming asemiconductor workpiece including a scribe line region, a first IC die,and a second IC die, wherein the scribe line region separates andadjoins the first and second IC dies, wherein the first IC die includesa circuit and a pad structure electrically coupled to the circuit,wherein the pad structure includes a first pad, a second pad, and abridge, and wherein the bridge is within the scribe line region andextends from the first pad to the second pad to connect the first pad tothe second pad; forming an upper adhesive layer overlying semiconductorworkpiece, on the scribe line region; bonding an upper insulating plateto a top of the semiconductor workpiece through the upper adhesivelayer; performing an etch into a bottom of the semiconductor workpieceto form a scribe line opening in the scribe line region; forming a loweradhesive layer lining the bottom of the semiconductor workpiece andfilling the scribe line opening; bonding a lower insulating plate to thebottom of the semiconductor workpiece through the lower adhesive layer;cutting the lower insulating plate, the lower adhesive layer, thesemiconductor workpiece, the pad structure, and the upper adhesivelayer, but not the upper insulating plate, along the scribe line regionto define a notch separating the first IC die and the second IC die,wherein the cutting of the pad structure removes the bridge to separatethe first and second pads; forming an external link lining the notch andextending from lateral contact with a sidewall of the second pad to anunderside of the lower insulating plate; and cutting the external linkand the upper insulating plate along the scribe line region. In someembodiments, the first IC die further includes an array of pixelsensors, wherein the method further includes: forming an array of colorfilters overlying the array of pixel sensors and recessed into the topof the semiconductor workpiece; and forming an array of micro-lensesoverlying the array of color filters, wherein the upper insulating plateis transparent and covers the array of micro-lenses. In someembodiments, the pad structure has a U-shaped layout before the cuttingof the pad structure. In some embodiments, the first pad is electricallycoupled to the circuit before the cutting of the pad structure, whereinthe first pad is electrically floating upon completing the cutting ofthe pad structure. In some embodiments, the semiconductor workpieceincludes a passivation layer covering the first and second pads, whereinthe method further includes performing a second etch into thepassivation layer to form an opening exposing the first pad, but not thesecond pad, and wherein the cutting of the pad structure is performedwhile the second pad is covered by the passivation layer. In someembodiments, the method further includes performing CP testing on thecircuit using the first pad through the opening. In some embodiments,the method further includes forming corrosion or damage on the first padthrough the opening between the performing of the second etch and thecutting of the semiconductor workpiece. In some embodiments, the formingof the semiconductor workpiece includes: forming semiconductor devicesin a semiconductor substrate of the semiconductor workpiece; forming aninterconnect structure covering the semiconductor devices and thesemiconductor substrate, wherein the interconnect structures includes anILD layer, a plurality of wires, and a plurality of vias, and whereinthe wires and the vias are alternatively stacked in the ILD layer;forming the pad structure on the interconnect structure; and forming apassivation layer covering the pad structure and the interconnectstructure, wherein the upper adhesive layer is formed on the passivationlayer. In some embodiments, the method further includes forming a BGA onthe underside of the lower insulating plate, wherein the external linkelectrically couples the BGA to the second pad.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming an integrated circuit (IC)package, the method comprising: forming a semiconductor workpiececomprising a scribe line region, a first IC die, and a second IC die,wherein the scribe line region separates and adjoins the first andsecond IC dies, wherein the first IC die comprises a circuit and a padstructure electrically coupled to the circuit, wherein the pad structurecomprises a first pad, a second pad, and a bridge, and wherein thebridge is within the scribe line region and extends from the first padto the second pad to connect the first pad to the second pad; andcutting the semiconductor workpiece along the scribe line region toindividualize the first and second IC dies, wherein the cutting removesthe bridge to separate the first and second pads.
 2. The methodaccording to claim 1, wherein the semiconductor workpiece comprises apassivation layer covering the first pad and the second pad, and whereinthe method further comprises: performing an etch into the passivationlayer to form an opening exposing the first pad, but not the second pad,and wherein the cutting is performed while the second pad is completelycovered by the passivation layer.
 3. The method according to claim 2,further comprising: performing circuit probe (CP) testing on the circuitusing the first pad through the opening.
 4. The method according toclaim 2, wherein the first IC die further comprises an array of pixelsensors, and wherein the method further comprises: forming an array ofcolor filters overlying the array of pixel sensors and recessed into atop of the passivation layer; and forming an array of micro-lensesoverlying the array of color filters.
 5. The method according to claim4, further comprising: performing a first round of circuit probe (CP)testing on the circuit using the first pad through the opening, whereinthe first round of CP testing is performed between the performing of theetch and the forming the array of color filters; and performing a secondround of CP testing on the circuit using the first pad through theopening, wherein the second round of CP testing is performed between theforming of the array of micro-lenses and the cutting of thesemiconductor workpiece.
 6. The method according to claim 2, furthercomprising: forming corrosion on the first pad between the performing ofthe etch and the cutting of the semiconductor workpiece, wherein thecorrosion forms on the first pad through the opening, and wherein thesecond pad is substantially free of corrosion during the cutting of thesemiconductor workpiece.
 7. The method according to claim 1, wherein thefirst pad is formed electrically coupled to the circuit through thesecond pad and the bridge, and wherein the first pad is electricallyfloating upon completion of the cutting.
 8. The method according toclaim 1, wherein the pad structure has a U-shaped layout before thecutting.
 9. The method according to claim 1, further comprising: afterthe cutting, forming an external link extending along a sidewall of thefirst IC die, from lateral contact with a sidewall of the second pad toan underside of the first IC die; and forming a solder bump on theunderside of the first IC die, wherein the solder bump is electricallycoupled to the circuit through the second pad and the external link. 10.A method for forming an integrated circuit (IC) package, the methodcomprising: forming a semiconductor workpiece comprising a scribe lineregion, a first IC die, and a second IC die, wherein the scribe lineregion separates and adjoins the first and second IC dies, and whereinthe first IC die comprises a circuit; forming a U-shaped pad structureon the first IC die, wherein the U-shaped pad structure comprises afirst pad, a second pad, and a bridge, wherein the bridge is within thescribe line region and extends from the first pad to the second pad toconnect the first and second pads, and wherein the first pad iselectrically coupled to the circuit through the bridge and the secondpad; forming a passivation layer covering the semiconductor workpieceand the U-shaped pad structure; performing an etch into the passivationlayer to form a circuit probe (CP) opening exposing the first pad, butnot the second pad; performing a first round of CP testing on thecircuit using the first pad through the CP opening; forming an array ofcolor filters overlying the circuit and the passivation layer; formingan array of micro-lenses overlying the array of color filters;performing a second round of CP testing on the circuit using the firstpad through the CP opening; cutting the semiconductor workpiece alongthe scribe line region to individualize the first and second IC dies,wherein the cutting removes the bridge to separate the first and secondpads, and wherein the first pad is electrically floating upon completionof the cutting; and forming an external link extending along a sidewallof the first IC die, from lateral contact with a sidewall of the secondpad to an underside of the first IC die.
 11. The method according toclaim 10, further comprising: forming corrosion on the first pad betweenthe performing of the etch and the cutting, wherein the second pad isfree of corrosion at the cutting.
 12. The method according to claim 10,wherein the forming of the semiconductor workpiece comprises: formingsemiconductor devices in a top of a semiconductor substrate; and formingan interconnect structure covering the semiconductor devices and thesemiconductor substrate, wherein the interconnect structure comprises alower interlayer dielectric (ILD) layer, a plurality of wires, and aplurality of vias, wherein the wires and the vias are alternatinglystacked in the lower ILD layer, and wherein the semiconductor devicesand the interconnect structure at least partially define the circuit.13. The method according to claim 12, wherein the forming of theU-shaped pad structure comprises: forming an upper ILD layer coveringthe lower ILD layer; patterning the upper ILD layer to define featureopenings in the upper ILD layer with a layout of the U-shaped padstructure; forming a conductive layer filling the feature openings andcovering the upper ILD layer; and performing a planarization into theconductive layer to about even with a top surface of the upper ILD layerto form the U-shaped pad structure from the conductive layer, whereinthe U-shaped pad structure is electrically coupled to the semiconductordevices through the wires and the vias.
 14. A method for forming anintegrated circuit (IC) package, the method comprising: forming asemiconductor device on a semiconductor substrate, wherein thesemiconductor substrate has an IC die region and a scribe-line region,and wherein the semiconductor device is at the IC die region; forming aninterconnect structure on the semiconductor substrate, wherein theinterconnect structure comprises a plurality of wires, a plurality ofvias, and a pad structure, wherein the wires and the vias arealternatingly stacked and define a conductive path from the padstructure to the semiconductor device, wherein the pad structurecomprises a first pad, a second pad, and a bridge, wherein the first andsecond pads overlie the IC die region, and wherein the bridge overliesthe scribe-line region and extends from the first pad to the second pad;and cutting the semiconductor substrate along the scribe-line region toremove the bridge and to separate the first and second pads.
 15. Themethod according to claim 14, further comprising: forming a passivationlayer covering the first and second pads; and patterning the passivationlayer to uncover the first pad, but not the second pad.
 16. The methodaccording to claim 15, further comprising: forming microlenses on thepassivation layer, and overlying the IC die region, before the cutting.17. The method according to claim 14, further comprising: forming aconductive wire extending from a sidewall of the second pad to a bottomsurface of the semiconductor substrate, wherein the conductive wirewraps around a bottom corner of the semiconductor substrate.
 18. Themethod according to claim 14, wherein the interconnect structurecomprises a second pad structure, wherein the second pad structurecomprises a third pad, a fourth pad, and a second bridge, wherein thethird and fourth pads overlie the IC die region, and wherein the secondbridge overlies the scribe-line region and extends from the third pad tothe fourth pad.
 19. The method according to claim 17, wherein the scribeline region extends in a closed path along a boundary of the IC dieregion to completely surround the IC die region.
 20. The methodaccording to claim 14, wherein the first pad is electrically coupled tothe semiconductor device through the bridge.